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Toshiba and WD Reach Global Settlement and to Strengthen Flash Memory Collaboration (2017.12.13)
Toshiba Corporation, Toshiba Memory Corporation and Western Digital Corporation have entered into a global settlement agreement to resolve their ongoing disputes in litigation and arbitration, strengthen and extend their relationship, and enhance the mutual commitment to their ongoing flash memory collaboration |
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Toshiba Memory Unveils UFS Ver. 2.1 Embedded NAND Flash Memory Products for Automotive (2017.12.12)
Toshiba Memory Corporation announced that it has begun shipping samples of embedded NAND flash memory products for automotive applications that are compliant with JEDEC UFS version 2.1. The new products meet AEC-Q100 Grade2 requirements and support a wide temperature range of -40°C to +105°C, offering the enhanced reliability capabilities that are required by increasingly complex automotive applications |
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TrendForce Forecasts Oversupply and Price Drop in 1Q18 NAND Flash Market (2017.12.11)
DRAMeXchange, a division of TrendForce, expects lower demand for NAND Flash in 1Q18 due to the traditional off-peak season. The demand from notebooks, tablets, and smartphones (mainly Chinese branded smartphones) is estimated to drop by more than 15% compared with 4Q17, and that from server will remain generally the same |
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Samsung Starts Producing First 512GB Universal Flash Storage (2017.12.05)
Samsung Electronics today announced that it has begun mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Utilizing Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB eUFS package provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets |
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Toshiba Memory Unveils UFS Devices Utilizing 64-Layer, 3D Flash Memory (2017.11.29)
Toshiba Memory Corporation started sampling Universal Flash Storage (UFS) devices utilizing Toshiba Memory Corporation’s cutting-edge 64-layer, BiCS FLASH 3D flash memory. The new UFS devices meet performance demands for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets, and augmented and virtual reality systems |
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Four Macronix Technical Papers Selected for 2017 IEDM (2017.11.29)
HSINCHU, Taiwan - Macronix International today announces that it has four technical papers selected for presentation at 2017 IEEE International Electron Devices Meeting (IEDM) which is taking place in San Francisco, USA from December 2-6 |
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Global NAND Flash Revenue from Branded Manufacturers Increased by 14.3% in 3Q17, TrendForce Reports (2017.11.20)
DRAMeXchange, a division of TrendForce, reports a growing demand for NAND Flash under the influence of traditional peak season and increasing demand for smartphones and SSD from servers and data centers. The gap between supply and demand is larger compared with the previous quarter |
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Intel and Micron Increase 3D XPoint Manufacturing Capacity with IM Flash Fab Expansion (2017.11.14)
Intel and Micron announced the completion of an expansion to Building 60 (B60) at the IM Flash facilities in Lehi, Utah.
The expanded fab will produce 3D XPoint memory media, a building block of Intel Optane technology that includes Intel Optane memory for clients, the recently announced Intel Optane SSD 900P Series and new capacities and form factors of the Intel Optane SSD DC P4800X Series |
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Winbond Introduces TrustME Secure Flash Memory Implementing the TCG DICE Architecture (2017.10.26)
TAICHUNG, Taiwan - Winbond Electronics Corporation today announced an expansion of its TrustME Secure Flash products portfolio based on the Trusted Computing Group (TCG) Device Identifier Composition Engine (DICE) Architecture specification |
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TrendForce Maintains 4Q17 NAND Flash Market Outlook After Toshiba’s Capacity Rumors (2017.10.17)
Despite lower-than-expected output caused by certain problems in production lines, Toshiba will be able to deliver its NAND Flash shipments as per the dates and volumes in its fourth-quarter contracts, says DRAMeXchange, a division of TrendForce |
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NAND Flash Market to Regain Balance in 2018 with Annual Bit Supply Growing by 42.9%, TrendForce Says (2017.09.27)
Demand has exceeded supply in the global NAND Flash market for six consecutive quarters since the third quarter of 2016, according to the latest research from DRAMeXchange, division of TrendForce. During this 2017, NAND Flash demand continues to expand because of the increase in average memory content of smartphones and the strong server market |
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Toshiba Memory to Focus on Catching Up to Samsung in 3D-NAND Production Capacity (2017.09.21)
According to DRAMeXchange, a division of TrendForce, the Toshiba Memory Corporation (TMC) deal will start to have a notable impact on the NAND Flash market in the first half of 2018 as the negotiations took longer than expected |
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Winbond to Establish Factory in Kaohsiung to Manufacture Niche Type DRAM and Flash Memory (2017.09.07)
TAIPEI, Taiwan - Taiwan's Ministry of Science and Technology (MOST) announced yesterday that semiconductor manufacturer Windbond's application to establish a factory to manufacture Niche Type Dynamic Random Access Memory (DRAM) and Flash Memory products has been approved |
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Most of 2017 Capital Spending Will Go to Foundry and Flash Memory, IC Insights Says (2017.09.01)
Following a substantial increase in semiconductor capital expenditures during the first half of this year, IC Insights raised its annual semiconductor capex forecast to a record high of $80.9 billion for 2017, a 20% increase from $67 |
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NAND Flash Prices to Keep Rising in 3Q17, TrendForce Says (2017.08.21)
DRAMeXchange, a division of TrendForce, reports that the NAND Flash market continued to experience tight supply in the second quarter. As a result, contract prices of various lines of NAND Flash products rose by 3% to 10% from the first quarter despite the seasonal headwinds |
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Longsys Introduces World-First 11.5x13mm NVMe BGA SSD Drives (2017.08.11)
Longsys announced expansion of its DRAM-less SSD product line from Serial ATA (SATA) interface to Non-Volatile Memory Express (NVMe) interface. Boot Partitions, an NVMe revision 1.3 feature, integrates BIOS/UEFI system inside an SSD and gives the host an option to simplify system design without SPI Flash |
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Intel Unveils New SSD Form Factor and Innovative Designs (2017.08.08)
Intel today announces major data center storage advances, new “ruler” form factor SSDs and dual port SSDs. The new technologies advance data center storage and deliver innovative solutions to meet the challenges presented by the growing reliance on data |
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Toshiba Memory Unveils 64-Layer, 3D Flash Memory, Single Package NVMe Client SSD (2017.08.03)
Toshiba Memory Corporation today announced the launch of the BG3 series, a new line-up of single package NVM Express (NVMe) client SSDs integrating Toshiba Memory Corporation’s cutting-edge 64-layer, 3-bit-per-cell (TLC) BiCS FLASH and controller in a ball grid array (BGA) package |
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Macronix Launches AEC-Q100 Full Compliant NAND Flash Memory (2017.07.21)
Macronix announced its AEC-Q100 Grade 2/3 compliant NAND Flash memory product. The NAND Flash memory has passed all the AEC-Q100 reliability standards, and becomes the AEC-Q100 full compliant NAND Flash product for automotive applications |
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DRAM and NAND are Setting Record Highs This Year, IC Insights Says (2017.07.19)
According to IC Insights' report, sales of both memory types—DRAM and NAND—are expected to set record highs this year. In both cases, the strong annual upturn in sales is being driven almost entirely by fast-rising average selling prices |
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