元件 次系統 自動控制 |
最新動態
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產業快訊
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結論
本文論述的Z2-FET DGP首次採用最先進的FDSOI製造技術。DC實驗結果很有說服力。薄膜厚度對於能否正常工作十分重要。本文討論了性能相同的互補型元件。同時還討論了製程的影響。Z2-FET DGP可用作邏輯開關,因為具有滯回,可用於研發1T-DRAM記憶體。最後,在GP-P旁邊增加一個GP-N層,可提升元件的功能性,使Z2-FET DGP的觸發電壓Vt1高於標準Z2-FET。這使Z2-FET DGP可以替代採用先進FDSOI技術的ESD保護元件。
(本文作者H.El Dirani(1,2)、P.Fonteneau1,Y.Solaro(2)、P.Ferrari(2)、S.Cristoloveanu(2)於(1)意法半導體,Crolles,France及(2)Univ.Grenoble Alpes, CNRS, IMEP-LAHC, F-38000 Grenoble, France)
參考文獻
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