GLOBALFOUNDRIES today unveiled its new 12nm FD-SOI semiconductor technology in Shanghai, China, the company’s next-generation 12FDX platform is designed to enable the intelligent systems of tomorrow across a range of applications, from mobile computing and 5G connectivity to artificial intelligence and autonomous vehicles.
12FDX provides an optimized platform for combining radio frequency (RF), analog, embedded memory, and advanced logic onto a single chip. The technology also provides the industry’s widest range of dynamic voltage scaling and unmatched design flexibility via software-controlled transistors—capable of delivering peak performance when and where it is needed, while balancing static and dynamic power for the ultimate in energy efficiency.
“Some applications require the unsurpassed performance of FinFET transistors, but the vast majority of connected devices need high levels of integration and more flexibility for performance and power consumption, at costs FinFET cannot achieve,” said GLOBALFOUNDRIES CEO Sanjay Jha. “
Our 22FDX and 12FDX technologies fill a gap in the industry’s roadmap by providing an alternative path for the next generation of connected intelligent systems. And with our FDX platforms, the cost of design is significantly lower, reopening the door for advanced node migration and spurring increased innovation across the ecosystem.”
GLOBALFOUNDRIES’ new 12FDX technology is built on a 12nm fully-depleted silicon-on-insulator (FD-SOI) platform, enabling the performance of 10nm FinFET with better power consumption and lower cost than 16nm FinFET. The platform offers a full node of scaling benefit, delivering a 15 percent performance boost over today’s FinFET technologies and as much as 50 percent lower power consumption.
