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New Aspect of Atom Mimicry for Nanotechnology Applications (2016.12.03)
In nanotechnology control is key. Control over the arrangements and distances between nanoparticles can allow tailored interaction strengths so that properties can be harnessed in devices such as plasmonic sensors. Now resear |
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Toshiba New General Purpose Multi-Output System Power IC (2016.12.02)
Toshiba Corporation's Storage & Electronic Devices Solutions Company today launched "TC7739FTG,” a general purpose, multi-output system power IC equipped with DC-DC power supplies and serialized regulators. Mass production will start at the end of this month |
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NAND Flash Revenue Rose 19.6% Sequentially in Q3 as Demand Outpaced Supply, TrendForce Reports (2016.12.01)
Prices of NAND Flash rose in the third quarter as smartphone makers continued to generate robust demand for related products and the technological transition from 2D-NAND to 3-NAND manufacturing reduced the industry’s overall output |
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SSD Prices to Register Largest Sequential Increase for Q4 2016, TrendForce Reports (2016.11.30)
Client-grade SSDs of mainstream capacities for the PC-OEM market are expected to witness the largest sequential increase in average contract price in almost a year for the fourth quarter of 2016, according to DRAMeXchange, a division of TrendForce |
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IoT and Automotive to Drive IC Market Growth Through 2020 (2016.11.30)
Integrated circuit sales for connections to the Internet of Things are forecast to grow more than three times faster than total IC revenues during the last half of this decade, according to IC Insights’ new 2017 Integrated Circuit Market Drivers report |
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Annual Sales Revenue from Fabless IC Design to Drop 3.2% in 2016, TrendForce Reports (2016.11.29)
The latest estimate from market research firm TrendForce puts sales revenue worldwide from fabless IC design for 2016 at US$77.49 billion, a decline of 3.2% from 2015. However, TrendForce expects strong growth in several application markets in 2017, such as automotive electronics |
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TSMC to Start Its 5nm Process Production in Tainan, Taiwan Next Year (2016.11.25)
TAIPEI, Taiwan - The environmental assessment of the TSMC's 5-nanometer process production in Tainan, Taiwan, yesterday had been approved by the Taiwan Environmental Protection Administration. TSMC said its 5-nanometer process will start next year, to enter mass production in 2020 |
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Q3 2016 Taiwan IC Revenue Totaled NT$659.6 Billion (2016.11.17)
TAIPEI, Taiwan - According to The Taiwan Semiconductor Industry Association (TSIA) that Q3 2016 Taiwan IC revenue as a whole (including design, manufacturing, packaging and testing) totaled NT$659.6 billion(US$20.7B), 9.7% growth on-quarter and up 14 |
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UMC Holds Grand Opening Ceremony for New 12-Inch Wafer Fab in China (2016.11.16)
United Microelectronics Corporation (UMC) today celebrated the grand opening of United Semi, UMC’s 12-inch joint venture wafer fab in Xiamen China. The fab was completed in record time, realized volume production for customer products merely 20 months after groundbreaking in March of 2015 |
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eMemory’s NeoFuse IP Verified in TSMC 10nm FinFET Process (2016.11.16)
HSINCHU, Taiwan – eMemory today announced the successful demonstration of its security-enhanced NeoFuse IP in TSMC’s 10nm FinFET process, along with IP design kits available to customers for product design-in.
Security concerns associated with high-level chips heighten the need for security functions in logic NVM IP with leading-edge process nodes |
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TSMC to Publish 7nm FinFET Technology at ISSCC 2017 (2016.11.15)
TAIPEI, Taiwan – The International Solid-State Circuits Conference (ISSCC) 2017 is going to be held on February 5, 2017 to February 9 in San Francisco, United States. And there will be 15 papers to be published from Taiwan, including TSMC’s 7-nanometer Fin Field-Effect Transistor (FinFET) technology which will be the industry’s first to announce at ISSCC 2017 |
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Modulated Doping Improves GaN-based Vertical-cavity Surface-emitting Lasers (2016.11.14)
Researchers at Meijo University and Nagoya University in Japan demonstrate a design of GaN-based vertical-cavity surface-emitting lasers (VCSELs) that provides good electrical conductivity and is readily grown. The findings are reported in Applied Physics Express |
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Xilinx Unveils Details for New 16nm Virtex UltraScale+ FPGAs (2016.11.09)
Xilinx today unveiled details for new 16nm Virtex UltraScale+ FPGAs with HBM and CCIX technology. Containing the highest memory bandwidth available, these HBM-enabled FPGAs offer 20X higher memory bandwidth relative to a DDR4 DIMM and 4X less power per bit versus competing memory technologies |
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Toshiba to Expand 3D Flash Memory Production Capacity (2016.11.08)
Toshiba Corporation today announced the outline schedule for the construction of a state-of-the-art fabrication facility at Yokkaichi Operations in Mie, Japan, for expanded production of BiCS FLASH, its proprietary 3D Flash memory |
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Panasonic to Start Mass Production of High-speed Gate Driver Dedicated to GaN Power Transistor X-GaN (2016.11.07)
Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN in November 2016. The company will also start mass production of two types of X-GaN (PGA26E07BA and PGA26E19BA) and provide solutions in combination with high-speed gate drivers |
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Samsung Expands Its Advanced Foundry Offerings with 14LPU and 10LPU Processes (2016.11.06)
Samsung Electronics announced that it is expanding its advanced foundry process technology offerings with the fourth-generation 14-nanometer (nm) process (14LPU) and the third-generation 10nm process (10LPU) to meet the requirements of next generation products ranging from mobile and consumer electronics to data centers and automotives |
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Precision Voltage Reference Drives Up to 200mA, Achieves 0.1ppm/mA Load Regulation & 10ppm/°C Drift (2016.11.04)
Linear Technology announces the LT6658, a precision voltage reference that incorporates two high current output buffers. Based on a 2.5V bandgap voltage reference, each output can be separately configured for any voltage between 2 |
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TI's New Unified Memory 16-bit Microcontrollers (2016.11.04)
Texas Instruments (TI) expanded its ultra-low-power MSP430 FRAM microcontroller (MCU) portfolio with two new low-power families targeting a wide range of sensing and measurement applications.
The new MCUs extend the portfolio from 2KB to 256KB of integrated ferroelectric random access memory (FRAM) technology, which is a non-volatile memory technology that offers unmatched flexibility and ultra-low power performance |
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Automotive Systems Forecast to Show Strongest Growth Through 2020, IC Insights Says (2016.11.03)
According to the IC Insights, the market for automotive electronic systems is expected to display the strongest cumulative average growth rate (CAGR) through 2020, at 4.9%, highest among the six main electronic system categories |
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Ixia Launches the First Software Solution Specifically Designed for Pre-silicon Testing (2016.11.02)
Ixia announced the availability of IxVerify, the first software solution specifically architected to work in an emulation-based verification flow. IxVerify, combined with the Veloce Virtual Network (VN) App, accelerates the pre-silicon verification of complex networking chips |
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